Composition dependence of the infrared dielectric functions in Si-doped hexagonal AlxGa1−xN films on c-plane sapphire substrates
نویسندگان
چکیده
Z. G. Hu,1 M. Strassburg,1,2 N. Dietz,1 A. G. U. Perera,1,* A. Asghar,2 and I. T. Ferguson2,3 1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA 3School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA Received 16 February 2005; revised manuscript received 30 September 2005; published 21 December 2005
منابع مشابه
و چاه کوانتومی چندتائی InxGa1-xN بررسی مدهای اپتیکی آلیاژ در ناحیه فروسرخ دور In0.5Ga0.5N/GaN
Optical properties of InxGa1-xN alloy and In0.5Ga0.5N/GaN multi quantum wells have been investigated in the region of far infrared. Far-IR reflectivity spectra of In0.5Ga0.5N/GaN multi quantum wells on GaAs substrate have been obtained by oblique incidence p- and s-polarization light using effective medium approximation. The spectra and the dielectric functions response give a good informa...
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